Electron-phonon coupling at InP(110) surfaces investigated by Resonant Raman Spectroscopy

Citation
K. Hinrichs et al., Electron-phonon coupling at InP(110) surfaces investigated by Resonant Raman Spectroscopy, PHYS ST S-A, 184(1), 2001, pp. 19-28
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
184
Issue
1
Year of publication
2001
Pages
19 - 28
Database
ISI
SICI code
0031-8965(20010315)184:1<19:ECAISI>2.0.ZU;2-V
Abstract
Electronic transitions at InP(110) surfaces are investigated by Surface Res onant Raman Spectroscopy (SRRS). Raman measurements of thr two localized su rface phonon modes at 254 and 270 cm(-1) (both of A'-symmetry) show distinc t resonances, in particular at low temperature (50 K). The deformation pote ntial coupling between surface phonons and electronic surface states is res ponsible for the resonance effects. Upon cooling, a blue-shift and a signif icant sharpening of the relevant electronic surface transitions is revealed by Reflectance Anisotropy Spectroscopy (RAS). Characteristic structures in the surface anisotropy function at 2.80, 2.97 and 3.48 eV are assigned to critical points of the surface electronic band structure.