Application of the phase-retrieval x-ray diffractometry to an ultra-high spatial resolution mapping of SiGe films near the absorption edge of Ge

A recently developed new experimental analytical X-ray diffraction method f or the direct non-destructive characterization of single-crystal alloys is applied to map the complex structure-factor of SiGe layers with an ultra-hi gh spatial resolution of 5.8 Angstrom. The technique is based on analytical measurements of X-ray phase and amplitude changes in a narrow polychromati c region of synchrotron radiation near the absorption edge of the alloy imp urity. These atomic spatial resolution studies have allowed observation and preliminary analysis of surface and interface nanoscale sublayers, where t he crystal structure-factor may noticeably differ from the bulk material.