Trap levels in RF sputtered CdS thin films

Authors
Ashour, H El Akkad, F
Citation
H. Ashour et F. El Akkad, Trap levels in RF sputtered CdS thin films, PHYS ST S-A, 184(1), 2001, pp. 175-178
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
184
Issue
1
Year of publication
2001
Pages
175 - 178
Database
ISI
SICI code
0031-8965(20010315)184:1<175:TLIRSC>2.0.ZU;2-4
Abstract
The trap levels in CdS thin films prepared by rf magnetron sputtering have been investigated using Photoinduced Current Transient Spectroscopy (PICTS) . Trap levels in the range 0.08-1.06 eV have been detected. Those levels ar e tentatively attributed to native defects and foreign impurities (particul arly Cu and Ag).