Excited states of InAs/GaAs quantum dots

Citation
R. Heitz et al., Excited states of InAs/GaAs quantum dots, PHYS ST S-B, 224(2), 2001, pp. 367-371
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
224
Issue
2
Year of publication
2001
Pages
367 - 371
Database
ISI
SICI code
0370-1972(200103)224:2<367:ESOIQD>2.0.ZU;2-5
Abstract
Exciton properties of self-organized InAs/GaAs QDs are investigated. Size-s elective spectroscopy reveals the excited single-exciton transition spectru m and enhanced polar exciton-LO-phonon coupling. A good qualitative underst anding of the experimental results is achieved by eight-band kp calculation s. Renormalization of the single-exciton spectrum in highly populated QDs s hows the importance of many-particle interactions in the strong confinement limit. The ground state transition energy decreases by similar to 16 meV f or QDs occupied with similar to 18 excitons.