Spectral hole-burning and carrier-heating dynamics in quantum-dot amplifiers: Comparison with bulk amplifiers

Authors
Borri, P Langbein, W Hvam, JM Heinrichsdorff, F Mao, MH Bimberg, D
Citation
P. Borri et al., Spectral hole-burning and carrier-heating dynamics in quantum-dot amplifiers: Comparison with bulk amplifiers, PHYS ST S-B, 224(2), 2001, pp. 419-423
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
224
Issue
2
Year of publication
2001
Pages
419 - 423
Database
ISI
SICI code
0370-1972(200103)224:2<419:SHACDI>2.0.ZU;2-T
Abstract
The ultrafast gain dynamics in an electrically pumped InAs/InGaAs/GaAs quan tum-dot amplifier are measured at room temperature with femtosecond resolut ion, and compared with results on an InGaAsP bulk amplifier. The role of sp ectral hole burning and carrier heating in the recovery of the gain compres sion is investigated. Reduced carrier heating for both gain and refractive index dynamics of the quantum-dot device is found, which is a promising pre requisite for high-speed applications.