The ultrafast relaxation dynamics of photoexcited carriers in Ge nanocrysta
ls is here investigated using a pump-and-probe technique. Three different e
xcitation energies (1.59, 3.18, 4.77 eV) are used, and the spectral interva
l between 1.7 and 2.8 eV is probed. The electron dynamics has been studied
and the scattering times have been evaluated, together with their dependenc
e on the pump energy. The transient signal has been interpreted in terms of
two main contributions: (i) conduction band filling and (ii) band gap reno
rmalization. A model based on the bulk band structure allows to explain the
overall response.