Coherent control of stress-induced InGaAs quantum dots by means of phonon-assisted resonant photoluminescence

Authors
Baranov, AV Davydov, V Fedorov, AV Ren, HW Sugou, S Masumoto, Y
Citation
Av. Baranov et al., Coherent control of stress-induced InGaAs quantum dots by means of phonon-assisted resonant photoluminescence, PHYS ST S-B, 224(2), 2001, pp. 461-464
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
224
Issue
2
Year of publication
2001
Pages
461 - 464
Database
ISI
SICI code
0370-1972(200103)224:2<461:CCOSIQ>2.0.ZU;2-#
Abstract
We report the control of coherent status of the lowest energy electronic st ate of InGaAs/GaAs stress-induced quantum dots in an inhomogeneously broade ned system by time-integrated detection of narrow Raman-like lines in reson ant photoluminescence spectra. The dephasing time of 18.5 ps has been found at 2K.