Oswald ripening of facetted self-assembled PbSe quantum dots during annealing

Citation
A. Raab et G. Springholz, Oswald ripening of facetted self-assembled PbSe quantum dots during annealing, PHYS ST S-B, 224(2), 2001, pp. 509-513
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
224
Issue
2
Year of publication
2001
Pages
509 - 513
Database
ISI
SICI code
0370-1972(200103)224:2<509:OROFSP>2.0.ZU;2-K
Abstract
The thermal stability of facetted self-assembled PbSe quantum dots during a nnealing is investigated. With increasing annealing time the dot density is found to decrease rapidly with a simultaneous increase of the average dot volume. This behavior is well described by Oswald ripening under interface reaction limited mass transfer conditions. Therefore, the islands formed du ring growth do not represent an equilibrium structure.