Fine structure and spin relaxation of excitons localized at CdSe sub-monolayer insertions in a ZnSe matrix

Resonant spin-flip Raman scattering in tilted magnetic fields up to 14 T ha s been used to investigate excitons localised by the random disorder create d by sub-monolayer insertions of CdSe in a ZnSe matrix. The field dependenc es of the Raman shifts, of the linewidths of the signals and of their inten sities have been measured and fitted by a simple theoretical model and the g-factors and exchange parameters have been determined. It is concluded tha t spin-flip of the total exciton spin is one of the important mechanisms of spin relaxation.