Standing optical phonons in finite semiconductor superlattices studied by resonant raman scattering in a double microcavity

Citation
A. Fainstein et al., Standing optical phonons in finite semiconductor superlattices studied by resonant raman scattering in a double microcavity, PHYS REV L, 86(15), 2001, pp. 3411-3414
Citations number
10
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
86
Issue
15
Year of publication
2001
Pages
3411 - 3414
Database
ISI
SICI code
0031-9007(20010409)86:15<3411:SOPIFS>2.0.ZU;2-8
Abstract
We report optical double resonant enhancement of Raman scattering in a new double microcavity geometry. The design allows almost backscattering geomet ries, providing easy access to the excitations' in-plane dispersion. The ca vity is used to study the phonon spectra of a finite GaAs/AlAs superlattice . A new type of "standing optical vibration" is demonstrated involving the GaAs confined phonons with a standing wave envelope determined by the super lattice thickness. A strong dispersion of the first order standing wave mod e is observed, as well as its anticrossing with higher order confined modes of the same symmetry.