New paradigm of silicon technology

dWe present a new paradigm of Si technologies to establish a gigahertz-oper ation gigascale integrated system large-scale integration (LSI), including digital and analog circuits. According to the theoretical analysis of high- speed signal propagation properties in the practical LSI structure, a gas-i solated-interconnect high-k gate di-electric metal-gate metal-substrate sil icon-on-insulator (SOI) LSI structure is proposed as a possible solution fo r a future gigahertz GSI system LSI, where the clock rate is improved up to beyond 10 Ghz and the minimum feature size is reduced down to 0.035 mum wi th keeping a continuous progress of the LSI's speed performance. Perfect sc ientific manufacturing free from fluctuations consisting of total low-tempe rature high-quality and high-speed processes based on very high-density pla sma having very low electron temperatures is essential to realize them.