Analysis of the temperature-induced transition to current self-oscillations in doped GaAs/AlAs superlattices

We observed the decrease of the hysteresis effect and the transition from t he stable to the dynamic domain regime in doped superlattices with increasi ng temperature. The current-voltage characteristics and the behaviours of t he domain boundary are dominated by the temperature-dependent lineshape of the electric field dependence of the drift velocity (V(F)), As the peak-val ley ratio in the V(F) curve decreases with increasing temperature, the hyst eresis will diminish and temporal current self-oscillations will occur. The simulated calculation, which takes the difference in V(F) curves into cons ideration, gives a good agreement with the experimental results.