Turn-off performance of 2.6 kV 4H-SiC asymmetrical GTO thyristor

4H-SiC asymmetrical gate turn-off thyristors (GTOs) with 2.6 kV breakover v oltage have been studied in relation to the gate turn-off performance. Tran sient characteristics of SIC GTOs and the pulse regime of gate turn-off pro cesses were studied in the temperature range 293 to 500 K. At cathode curre nt density of 300. A cm(-2), a turn-off current gain K-G of 12.5 was achiev ed at room temperature. The above value of K-G is the highest reported for SiC GTOs. The temperature dependences of the rum-off time, pulse turn-off g ate current and holding current were studied.