Effect of pre-Co-deposition C+ implantation on the stress level of CoSi2 films formed on Si(100) substrates

The tensile stress in CoSi2 films formed by deposition of Co films on Si(10 0) substrates and subsequent ex situ rapid thermal annealing was reduced by implantation of carbon ions into Si substrates before the deposition of Co films. It was found that the stress in the CoSi2 films decreases linearly with the increase of the C+ implantation dose. The reason for the decrease in the tensile stress is explained in terms of the reduced difference in la ttice constants between the Si substrates and the CoSi2 films due to the C implantation into the Si substrates.