Thin-film CIS alloy PV materials fabricated using non-vacuum, particles-based techniques

Citation
C. Eberspacher et al., Thin-film CIS alloy PV materials fabricated using non-vacuum, particles-based techniques, THIN SOL FI, 387(1-2), 2001, pp. 18-22
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
387
Issue
1-2
Year of publication
2001
Pages
18 - 22
Database
ISI
SICI code
0040-6090(20010529)387:1-2<18:TCAPMF>2.0.ZU;2-M
Abstract
CuInSe2 (CIS) and its alloys with gallium and sulfur are excellent thin-fil m photovoltaic materials, but the vacuum deposition processes typically use d to fabricate thin-film CIS alloy photovoltaic (PV) devices are complex an d expensive. A new class of thin-film deposition processes based on non-vac uum processing of particulate materials offers a simple, inexpensive altern ative to fabricating high-efficiency CIS alloy PV. Suitable particulate mat erials can be prepared by a variety of techniques, including precipitation, pulverization, aerosol pyrolysis, vapor condensation, etc. Particulate pre cursors can be deposited in thin layers by simple techniques such as printi ng, spraying or dip coating. Porous precursor layers can be densified into dense, polycrystalline films by atmospheric-pressure sintering. By taking a dvantage of the unique materials science of CIS alloy films, one can mitiga te the inherent disadvantages of particle-based processing, e.g. layer poro sity. Using non-vacuum particles-based processes, efficiencies of 11.7% and 5% have been confirmed by NREL for CIS alloy cells and modules, respective ly. (C) 2001 Elsevier Science B.V. All rights reserved.