Recrystallization and components redistribution processes in electrodeposited CuInSe2 thin films

CuInSe2 layers have been prepared by direct electrodeposition onto Mo-coate d glass substrates, being the overall film composition adjusted by the subs trate polarization potential. The structure and composition of these sample s have been investigated by XRD, EDX and XPS for the films as-grown and aft er heating with Se vapor. The obtained data reveal the importance of oxygen interaction with CuInSe2 layers at temperatures above 400 degreesC, by res ulting in a crystalline In2O3 phase which remains in the film near-surface region and a poor crystalline Cu,Se which migrates towards the bulk. Such c omponents redistribution allows overall stoichiometric layers to approach t he characteristics of global Cu-rich ones and achieve the highest CuInSe2 r ecrystallization. (C) 2001 Elsevier Science B.V. All rights reserved.