CISCuT absorber layers - the present model of thin film growth

Experimental results and numeric calculations that have been contributed to a better understanding of how layer growth proceeds in the CISCuT process are given in this work. The heat transfer resistance between the heater and copper tape has been found to mainly determine the temperature of the copp er tape during the CISCuT process. From this, more insight into the strongl y temperature-dependent precursor formation has been gathered. The initial laver growth model of CISCuT absorber layer growth will be described and th e partial solubility of CuInS2, in CuIn-melts has been taken into account. Tape-like CISCuT-based solar cells, with a best efficiency of 5.4% achieved so far on an area of 4 cm(2), are presented. (C) 2001 Elsevier Science B.V . All rights reserved.