Reaction mechanism and kinetics for the chemical bath deposition of In(OH)(x)S-y thin films

Citation
R. Bayon et J. Herrero, Reaction mechanism and kinetics for the chemical bath deposition of In(OH)(x)S-y thin films, THIN SOL FI, 387(1-2), 2001, pp. 111-114
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
387
Issue
1-2
Year of publication
2001
Pages
111 - 114
Database
ISI
SICI code
0040-6090(20010529)387:1-2<111:RMAKFT>2.0.ZU;2-5
Abstract
The solution chemistry of InCl3-CH3CSNH2-CH3COOH (InCl3-TA-HAcO) system has been studied and the species distribution diagrams, solubility and precipi tation curves have been calculated. At an acidic pH (1-4), the (InCl3-TA-HA cO) solution contains mainly indium-chloro-complexes and In(OH)(3) precipit ation is not expected when HAcO is added. Kinetic calculations based on TA hydrolysis have shown that indium hydroxide-sulfide [In(OH)(x)S-y] precipit ation takes place through a mechanism faster than TA hydrolysis, probably a direct reaction between TA and any indium-chloro-complex, leading to diffe rent products depending on the pH of the deposition solution. (C) 2001 Else vier Science B.V. All rights reserved.