To make CdTe/CdS solar cells highly efficient, a Cu containing back contact
(BC) is generally used. These cells degrade due to Cu diffusion to the fro
nt contact which causes shunting; this is shown with secondary ion mass spe
ctroscopy (SIMS) depth profiling. To get a stable but still highly efficien
t cell, different BC materials and etching treatments were investigated. Ch
emical etching creates a back surface field (BSF) due to a p(+)-doped Te-ri
ch CdTe surface. To overcome the naturally existing Schottky barrier betwee
n p-CdTe and any metal, a thin buffer layer was evaporated prior to the met
allization. Amongst the many investigated BC materials, the most suitable a
re Sb or Sb2Te3 as a buffer and Mo for metallization. These eels showed hig
h stability under accelerated tests corresponding to 70 years. (C) 2001 Pub
lished by Elsevier Science B.V. All rights reserved.