Oriented growth and band alignment at the CdTe/CdS interface

Authors
Fritsche, J Thissen, A Klein, A Jaegermann, W
Citation
J. Fritsche et al., Oriented growth and band alignment at the CdTe/CdS interface, THIN SOL FI, 387(1-2), 2001, pp. 158-160
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
387
Issue
1-2
Year of publication
2001
Pages
158 - 160
Database
ISI
SICI code
0040-6090(20010529)387:1-2<158:OGABAA>2.0.ZU;2-M
Abstract
The CdTe/CdS interface has been investigated by photoemission and low energ y electron diffraction. The growth of CdS on single crystalline CdTe substr ates at elevated temperatures proceeds with the conservation of rotational symmetry. Initial results for the dependence of the band alignment on the c rystallographic orientation based on calibrated core level binding energies are presented. (C) 2001 Elsevier Science B.V. All rights reserved.