Chemical bath deposition of CdS buffer layer: prospects of increasing materials yield and reducing waste

Citation
D. Hariskos et al., Chemical bath deposition of CdS buffer layer: prospects of increasing materials yield and reducing waste, THIN SOL FI, 387(1-2), 2001, pp. 179-181
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
387
Issue
1-2
Year of publication
2001
Pages
179 - 181
Database
ISI
SICI code
0040-6090(20010529)387:1-2<179:CBDOCB>2.0.ZU;2-W
Abstract
The CdS buffer layer for CIGS-based solar cells is grown in an aqueous solu tion containing a cadmium salt, ammonia, and thiourea. Bottlenecks of this technique called chemical bath deposition (CBD) are the low material yield and the production of toxic CdS-containing waste. To improve yield and redu ce waste, the CdS precipitate was separated from the waste after deposition by ultra-filtration, and the permeate, which contains ammonia and thiourea , was used for the next CBD process after addition of cadmium salt. The use of permeate leads to a decrease of the CdS growth rate but has no signific ant influence on the CdS film composition and on the Cu(In,Ga)Se-2/CdS/ZnO device performance. The prominent formation of guanidine and urea was ident ified and quantified by chemical analysis of the permeate. A decrease of th e deposition rate is observed as a function of the number of runs, which is related to the enrichment of the permeate with reaction products and to hy droxide ion consumption. The growth rate can be maintained by adjusting the concentrations after each CBD run. (C) 2001 Elsevier Science B.V. All righ ts reserved.