Photoluminescence study of CuGaSe2 thin films grown on ZnO by MOCVD

Authors
Orsal, G Mailly, F Artaud-Gillet, MC Duchemin, S
Citation
G. Orsal et al., Photoluminescence study of CuGaSe2 thin films grown on ZnO by MOCVD, THIN SOL FI, 387(1-2), 2001, pp. 198-200
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
387
Issue
1-2
Year of publication
2001
Pages
198 - 200
Database
ISI
SICI code
0040-6090(20010529)387:1-2<198:PSOCTF>2.0.ZU;2-X
Abstract
In this paper, photoluminescence studies of CuGaSe2 thin films grown by met alorganic chemical vapor deposition on ZnO/glass substrates are presented. Generally, the emission is constituted by a large peak for which the intens ity is higher for stoichiometric samples than for Cu-rich and Ga-rich thin films. The peak shifts towards higher energies upon increasing the Ga conte nt. From the dependence on excitation intensity and temperature, the emissi on is identified as a donor-acceptor pair (DAP) transition. (C) 2001 Elsevi er Science B.V. All rights reserved.