This work reports the spectral characterisation of CuInS2 (CIS) layers for
solar cell devices by Raman scattering. The Raman spectrum from CIS is char
acterised by a dominant A, mode at approximately 290 cm(-1), being the posi
tion and width of the mode sensitive to the CIS structural quality. Besides
, layers with poor structural quality show the appearance in the spectra of
an additional line, not allowed for chalcopyrite crystals, at approximatel
y 305 cm(-1). The relative intensity of this line has been proposed as a fu
rther marker for film quality. To deepen in the knowledge of the origin of
this mode, Raman scattering measurements are performed in both polycrystall
ine and epitaxial layers under different conditions, including resonant Ram
an and different polarisation configurations. The origin of the mode is dis
cussed in terms of (i) the presence of phases with different symmetry as Cu
-Au ordering, and (ii) the possible existence of defect-related local vibra
tional modes. (C) 2001 Elsevier Science B.V. All rights reserved.