DLTS measurements on CuInS2 solar cells

Authors
Siemer, K Klaer, J Luck, I Braunig, D
Citation
K. Siemer et al., DLTS measurements on CuInS2 solar cells, THIN SOL FI, 387(1-2), 2001, pp. 222-224
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
387
Issue
1-2
Year of publication
2001
Pages
222 - 224
Database
ISI
SICI code
0040-6090(20010529)387:1-2<222:DMOCSC>2.0.ZU;2-P
Abstract
Deep-level transient spectroscopy (DLTS) was used in this work to reveal in formation about deep defect levels in CuInS2 based solar cells. A strong va riation of the defect spectrum from sample to sample was found. A minority carrier trap at 0.25 eV and a majority carrier trap at 0.35 eV were identif ied as bulk traps by variation of pulse height. Two majority carrier traps at 0.24 and 0.8 eV were confirmed as interface traps. (C) 2001 Elsevier Sci ence B.V. All rights reserved.