Two CdTe solar cells with very different IV-characteristics were analysed u
sing impedance spectroscopy (IS) and capacitance-voltage (CV) measurements
at different temperatures and under dark and illuminated conditions, The tw
o samples were distinguished by different durations of the nitric-phosphori
c (NP) etching process applied before back contact deposition. The cell wit
h a short etching time (30 s) shows a strong roll over in the forward bias
region, and the cell with the surface that was etched for a longer time (3
min) showed a very strong decrease of the roll-over and a better fill facto
r. The results show that the etching process dramatically changes the CV ch
aracteristics, the resulting CdTe effective doping concentration and that t
his change can be correlated to different equivalent circuits obtained by t
he fitting of the impedance spectra of the two samples. O 2001 Elsevier Sci
ence B.V. All rights reserved.