Positron lifetimes and Doppler broadening of the annihilation line measurem
ents were performed to study the vacancy type defects ill polycrystalline G
eTe and (GeTe)((--x))(AgBiTe2)(x) (x = 0, 0.03, 0.05, 0.1, 0.15, 0.2, and 1
) solid solutions. The values of lifetimes obtained are explained as due to
positron and positronium saturated trapping at vacancies and vacancy clust
ers. The interdependence between mean positron lifetime and hole concentrat
ion is discussed.