Fine tuning of Au/SiO2/Si diodes by varying interfacial dipoles using molecular monolayers

Citation
Y. Selzer et D. Cahen, Fine tuning of Au/SiO2/Si diodes by varying interfacial dipoles using molecular monolayers, ADVAN MATER, 13(7), 2001, pp. 508
Citations number
35
Categorie Soggetti
Multidisciplinary,"Material Science & Engineering
Journal title
ADVANCED MATERIALS
ISSN journal
09359648 → ACNP
Volume
13
Issue
7
Year of publication
2001
Database
ISI
SICI code
0935-9648(20010404)13:7<508:FTOADB>2.0.ZU;2-6
Abstract
The electron affinity of semiconductors and the work function of metals can be systematically varied by the adsorption of a series of organic molecule s with varying dipole moment. This effect can be used to induce molecular c ontrol over the electrical characteristics of some metal/semiconductor diod es. The variety of molecules that can be bonded to metals, together with th ose that are available for bonding to semiconductors, makes the method quit e flexible and may enable the build up of more sophisticated interfacial st ructures.