Surface morphology and chemical states of highly oriented PbZrO3 thin films prepared by a sol-gel process

Citation
Xg. Tang et al., Surface morphology and chemical states of highly oriented PbZrO3 thin films prepared by a sol-gel process, APPL SURF S, 174(2), 2001, pp. 148-154
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
174
Issue
2
Year of publication
2001
Pages
148 - 154
Database
ISI
SICI code
0169-4332(20010416)174:2<148:SMACSO>2.0.ZU;2-4
Abstract
Antiferroelectric PbZrO3 thin films have been prepared on Pt/Ti/SiO2/Si(100 ) substrates by a simple sol-gel process. The structure and surface morphol ogy evolution were investigated by an X-ray diffraction (XRD) and an atomic force microscopy (AFM), and a scanning electron microscopy (SEM), respecti vely, The results shows that the films grown on Pt/Ti/SiO2/Si (100) substra tes have a pseudocubic perovskite structure with high (100) oriention, and the surface morphology evolution of the thin film depends on annealing temp erature. The films have three dimensional island growth. The chemical state s and chemical composition of the film was also determined by X-ray photoel ectron spectroscopy (XPS), near the film surface. Pb and Zr exist mainly in the forms of PbZrO3. (C) 2001 Elsevier Science B.V. All rights reserved.