Xg. Tang et al., Surface morphology and chemical states of highly oriented PbZrO3 thin films prepared by a sol-gel process, APPL SURF S, 174(2), 2001, pp. 148-154
Antiferroelectric PbZrO3 thin films have been prepared on Pt/Ti/SiO2/Si(100
) substrates by a simple sol-gel process. The structure and surface morphol
ogy evolution were investigated by an X-ray diffraction (XRD) and an atomic
force microscopy (AFM), and a scanning electron microscopy (SEM), respecti
vely, The results shows that the films grown on Pt/Ti/SiO2/Si (100) substra
tes have a pseudocubic perovskite structure with high (100) oriention, and
the surface morphology evolution of the thin film depends on annealing temp
erature. The films have three dimensional island growth. The chemical state
s and chemical composition of the film was also determined by X-ray photoel
ectron spectroscopy (XPS), near the film surface. Pb and Zr exist mainly in
the forms of PbZrO3. (C) 2001 Elsevier Science B.V. All rights reserved.