A kinetic study on a non-conventional route for the production of silicon c
arbide was carried out on a laboratory scale. Silicon carbide was produced
by vacuum pyrolysis of rice husks in the temperature range 1200-1600 degree
sC. The resulting products were characterised by XRD and chemical analysis.
Attempts were made to develop the parametric relationships correlating the
yield of silicon carbide to the process variables and starting material ch
aracteristics. Empirical relationships defining the rate of silicon carbide
formation as a function of temperature, compaction pressure, CO gas diffus
ion, and compact porosity are proposed.