Analysis of the x-ray photoelectron spectra of a-SiOCF films prepared by plasma-enhanced chemical vapour deposition

The preparation of a-SiOCF firms from Si(OC2H5)(4), C4F8 and/or Ar using th e plasma-enhanced chemical vapour deposition method is reported. The chemic al bonding structures of the films are analysed by x-ray photoelectron spec troscopy (XPS). In the case of the films deposited from the mixture with an d without Ar, the configurations of F-Si-O-Si, Si-OH, Si-O-Si, C-CF and C-F are contained. However, there is also the C-C configuration in the film pr epared from the mixture with Ar. Moreover, it is found that the photoelectr on peaks of Si 2p, O 1s and F 1s for the film deposited from the feeding ga s with Ar show the same shift of about 1eV toward high binding energy in co mparison with those for the film prepared from the feeding gas without Ar. No evidence reveals the presence of an Si-C bond in the films.