Amorphous hydrogenated carbon-nitrogen alloy (a-CNx:H) thin films have been
deposited on silicon substrates by improved de magnetron sputtering from a
graphite target in nitrogen and hydrogen gas discharging. The films are in
vestigated by using Raman spectroscopy x-ray photoelectron spectroscopy spe
ctral ellipsometer and electron spin resonance techniques. The optimized pr
ocess condition for solar cell application is discussed. The photovoltaic p
roperty of a-CNx:H/silicon heterojunctions can be improved by the adjustmen
t of the pressure ratio of hydrogen to nitrogen and unbalanced magnetic fie
ld intensity. Open-circuit voltage and short-circuit current reach 300mV an
d 5.52mA/cm(2), respectively.