By chemical vapor deposition at atmospheric pressure using Mo(CO)(6) precur
sor and Ar/O-2 gas mixture, thin MoO3 films were prepared on Si substrates.
The deposition and sublimator temperatures were in the range of 150-200 an
d 70-90 degreesC, respectively. Investigations of the as-deposited MoO3 fil
ms were performed by spectroscopic ellipsometry (300-800 nm) and infrared s
pectrophotometry (200-1200 cm (-1)). The refractive index of the films was
found to be in the range of 1.7-2.3 and the optical band gap energy, E,,, e
stimated from the absorption analysis, was in the range of 2.76-3.14 eV. Th
e infrared spectra exhibit the characteristic peaks for P-modification of p
olycrystalline material. (C) 2001 Elsevier Science Ltd. All rights reserved
.