SWITCHING PROPERTIES OF V1-XTIXO2 THIN-FILMS DEPOSITED FROM ALKOXIDES

Authors
BETEILLE F MORINEAU R LIVAGE J NAGANO M
Citation
F. Beteille et al., SWITCHING PROPERTIES OF V1-XTIXO2 THIN-FILMS DEPOSITED FROM ALKOXIDES, Materials research bulletin, 32(8), 1997, pp. 1109-1117
Citations number
26
Categorie Soggetti
Material Science
Journal title
Materials research bulletin → ACNP
ISSN journal
00255408
Volume
32
Issue
8
Year of publication
1997
Pages
1109 - 1117
Database
ISI
SICI code
0025-5408(1997)32:8<1109:SPOVTD>2.0.ZU;2-1
Abstract
TiO2-doped vanadium dioxide films have been deposited from vanadium ox o-alkoxide solutions. VO2 thin films of good optical quality are obtai ned after heating at 500 degrees C under a reducing atmosphere. These films exhibit highly reversible electrical and optical switching aroun d 70 degrees C. A hysteresis phenomenon is observed, but V1-xTixO2 fil ms do not exhibit the same behavior as other doped VO2 films. The widt h of the hysteresis curve decreases as soon as Ti is added to the VO2 film. Best switching characteristics are obtained with Ti approximate to 5%. Evidence of the coexistence of two phases around the transition temperature is presented. (C) 1997 Elsevier Science Ltd.