5-gb/s XOR optical gate based on cross-polarization modulation in semiconductor optical amplifiers

Authors
Soto, H Erasme, D Guekos, G
Citation
H. Soto et al., 5-gb/s XOR optical gate based on cross-polarization modulation in semiconductor optical amplifiers, IEEE PHOTON, 13(4), 2001, pp. 335-337
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
13
Issue
4
Year of publication
2001
Pages
335 - 337
Database
ISI
SICI code
1041-1135(200104)13:4<335:5XOGBO>2.0.ZU;2-W
Abstract
In this letter, we demonstrate a new design for a XOR optical gate operatin g in the GHz regime using the cross-polarization modulation effect in a sem iconductor optical amplifier. Dynamic and optically controlled polarization rotation in the devices is used to control the output power of the device. Static extinction ratio of the order of 20 dB can be obtained, Bit rate do ubling at rate of 1.2 and 2.5 Gb/s have been demonstrated.