J. Wei et al., Gas source molecular beam epitaxy grown InGaAs(P)N-InP long-wavelength (lambda > 1.65 mu m) photodetectors using a solid arsenic source, IEEE PHOTON, 13(4), 2001, pp. 352-354
We demonstrate InGaAs(P)N-InP-based long-wavelength (lambda > 1.65 mum) p-i
-n photodetectors grown lattice-matched to InP substrates using a solid As
source, The background doping level in the absorption layer is significantl
y reduced from (5.0 +/- 0.3) x 10(17) cm(-3) for gas source As grown device
s to (3.5 +/- 0.5) x 10(16) cm(-3) for solid source As grown devices with t
he same cutoff wavelength of 1.85 mum, The external quantum efficiency at a
wavelength of 1.56 mum is 30% for the solid source grown detector as compa
red with 16% for the gas source grown detector due to the higher background
doping and hence smaller depletion region width in the latter diode. Nitro
gen-hydrogen complex formation and local strain-induced defects may signifi
cantly contribute to high free carrier concentrations observed in gas sourc
e As grown InGaAs(P)N layers.