Analytical charge-control and I-V model for submicrometer and deep-submicrometer MOSFETs fully comprising quantum mechanical effects

A new analytical current-voltage (I-V) model for submicrometer and deep-sub micrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model in metal-oxide-se miconductor structure. Threshold-voltage shift due to quantum mechanical ef fects, finite inversion layer thickness effects (inversion layer capacitanc e), as well as increased depletion layer charge density after the strong in version point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions i s given by one expression, Two-dimensional short channel effects such as ch annel length modulation, drain-induced barrier lowering, mobility degradati on, and carrier velocity saturation, as well as polysilicon depletion effec ts are included in the I-V model. Model results are compared with both nume rical results of carrier sheet density and surface potential in the channel , and experimental results of I-V data for submicrometer and deep-submicrom eter MOSFETs down to 0.09-mum effective gate length and the accuracy of the model are demonstrated.