Yt. Ma et al., Analytical charge-control and I-V model for submicrometer and deep-submicrometer MOSFETs fully comprising quantum mechanical effects, IEEE COMP A, 20(4), 2001, pp. 495-502
Citations number
25
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
A new analytical current-voltage (I-V) model for submicrometer and deep-sub
micrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is
developed based on a newly developed charge-control model in metal-oxide-se
miconductor structure. Threshold-voltage shift due to quantum mechanical ef
fects, finite inversion layer thickness effects (inversion layer capacitanc
e), as well as increased depletion layer charge density after the strong in
version point are incorporated in the model. Inversion layer charge density
with respect to the gate voltage from depletion through weak inversion to
strong inversion regions with smooth transition between different regions i
s given by one expression, Two-dimensional short channel effects such as ch
annel length modulation, drain-induced barrier lowering, mobility degradati
on, and carrier velocity saturation, as well as polysilicon depletion effec
ts are included in the I-V model. Model results are compared with both nume
rical results of carrier sheet density and surface potential in the channel
, and experimental results of I-V data for submicrometer and deep-submicrom
eter MOSFETs down to 0.09-mum effective gate length and the accuracy of the
model are demonstrated.