Charge conduction process and rectification effect in ITO/doped PPy/Ag device

Authors
Roy, MS Jaiswal, P",Manmeeta,"Saxena, D Sharma, GD
Citation
Ms. Roy et al., Charge conduction process and rectification effect in ITO/doped PPy/Ag device, I J ENG M S, 7(5-6), 2000, pp. 282-286
Citations number
4
Categorie Soggetti
Engineering Management /General
Journal title
INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES
ISSN journal
09714588 → ACNP
Volume
7
Issue
5-6
Year of publication
2000
Pages
282 - 286
Database
ISI
SICI code
0971-4588(200010/12)7:5-6<282:CCPARE>2.0.ZU;2-I
Abstract
Electrical, impedance and photovoltaic measurements with a thin film of PMB doped PPy and undoped PPy, using sandwich between Ag and ITO are explained in terms of p-type semiconducting behaviour of PMB doped-PPy (PMB:PPy) fil m and by the formation of Schottky barrier with Ag and ohmic contact with I TO. At low voltage region Ohm's law is followed, while at high voltage regi on a space charge limited conduction is observed which is controlled by the exponential trap distribution.