Power loss analysis of silicon carbide devices

Power loss analysis has been performed for silicon and silicon carbide base d power MOSFETs in terms of device electrical characteristics such as forwa rd current, blocking voltage, gate voltage, operating frequency and materia l properties like mobility, critical electric field, dielectric constant, e tc. It has been observed that minimum power losses in silicon carbide power MOSFETs are significantly less compared to silicon devices for same curren t, voltage (10 A, 500 V and 5 A, 1000 V) and operating frequency (1 kHz-10 MHz). Calculations have also been carried out for minimum device area corre sponding to minimum power losses for silicon carbide and silicon power MOSF ETs. Silicon carbide devices will need smaller area compared to silicon to operate at a given power level.