Growth kinetics of III-V compound semiconductors

In the present communication, the recent developments in the growth kinetic s of vapour phase epitaxy, liquid phase epitaxy and liquid phase electroepi taxy of III-V compound semiconductors have been reviewed. Investigations on the nucleation and growth mechanism of LII-V binary, ternary and quaternar y compounds grown from VPE are presented, compared with the available exper imental results and there is a good agreement between them. Computer simula tion technique has been used to construct the concentration profiles of the solute atoms present in front of the crystal-solution interface during the Liquid Phase Epitaxy and Liquid Phase Electroepitaxy of III-V binary, tern ary and quaternary compound semiconductors. The growth rate of the material s and hence the thickness of the grown films have also been determined.