Ps. Dobal et al., Structural modifications in titania-doped tantalum pentoxide crystals: a Raman scattering study, INT J INORG, 3(2), 2001, pp. 135-142
Tantalum pentoxide (Ta2O5) is promising for coating and piezoelectric appli
cations and has been considered as the dielectric gate material for the nex
t generation of memory devices. In this work, TiO2-doped Ta2O5 crystals wer
e prepared using the laser-heated pedestal growth technique, as grown speci
mens were found to crystallize in monoclinic phase at room temperature. The
structural modifications in these crystals resulting from variation of TiO
2 composition (0-11%) and temperature (-248-900 degreesC) were studied usin
g Raman spectroscopy. The low frequency external modes (upsilon < 100 cm(-1
)) that originate from the interaction between TaOn5-2 eta/Ta6O12+6 cluster
s/polyhedra exhibit a strong compositional and temperature dependence in te
rms of their intensity and frequency variations. The Raman spectral evoluti
ons suggested a monoclinic to orthorhombic structural phase transition at a
bout 327, 397, 487, and 577 degreesC For 0, 5, 8, and 11% TiO2-doped Ta2O5,
respectively. (C) 2001 Elsevier Science Ltd. All lights reserved.