Sn mole fractions forming as single phases in ZnGa2-xSnxO4 phosphors

Citation
Js. Kim et al., Sn mole fractions forming as single phases in ZnGa2-xSnxO4 phosphors, INT J INORG, 3(2), 2001, pp. 183-185
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INTERNATIONAL JOURNAL OF INORGANIC MATERIALS
ISSN journal
14666049 → ACNP
Volume
3
Issue
2
Year of publication
2001
Pages
183 - 185
Database
ISI
SICI code
1466-6049(200103)3:2<183:SMFFAS>2.0.ZU;2-4
Abstract
Solid solubility of Sn in ZnCa2-xSnxO4 Phosphors were investigated by using cathodoluminescence (CL) and X-ray diffraction (XRD) measurements. The CL spectra showed that the dramatic transition behavior of the CL emission ene rgy peak at the Sn mole fraction of 0.0004 in the ZnGa2-xSnO4 was observed. The XRD curves showed that the second phase corresponding to the ZnSnO3 to gether with an original phase related to the ZnGa2O4 was observed at the Sn mole fraction of 0.0004 in ZnGa2-xSnxO4. These results indicate that the S n mole fraction limit for the single phase formation in ZnGa2-xSnxO4 Phosph ors is 0.0002. (C) 2001 Elsevier Science Ltd. All rights reserved.