Crystal growth by molten metal flux method and properties of manganese silicides

Crystals of binary manganese silicides were grown from high temperature cop per, tin and lead metal fluxes by slow cooling method under an argon atmosp here, The growth conditions for obtaining single crystals of relatively lar ge size were established. For tin and lead fluxes, the three silicides Mn5S i3, MnSi, and Mn27Si47 crystals were prepared, and Mn5Si3 (about 0.1X0.1X6. 4 mm(3)) and MnSi (about 0.9X1.0X9.2 mm(3)) were obtained of relatively lar ge size from the tin flux. For copper flux, only the two silicides MnSi and Mn5Si3 were formed, and the crystals were somewhat smaller. As-grown Mn5Si 3, MnSi, and Mn27Si47 crystals were used for chemical analyses and measurem ents of density and unit cell parameters. The chemical analyses of the crys tals are discussed. Vickers microhardness and electrical resistivity were d etermined on MnSi and Mn5Si3 crystals, and oxidation at high temperature in air was studied for Mn5Si3, MnSi, and Mn27Si47 crystals. (C) 2001 Elsevier Science B.V. All rights reserved.