Dual-electrode biasing for controlling ion-to-adatom flux ratio during ion-assisted deposition of diamond

A dual-bias method using a grid mesh inserted into the front of a substrate has been employed to control the ion-to-adatom flux ratio in an inductivel y coupled plasma for depositing crystalline materials preferring low-energy ion bombardment. The Langmuir probe measurements revealed that the ion flu x toward the substrate decreased with increasing a positive substrate bias with the grid grounded, while it increased with increasing a positive grid bias with the substrate grounded. Ion energy analyses along the diffusing p lasma stream by using a probe and a mass spectrometer revealed the contribu tion of a high-energy tail in the ion-energy distribution into the bombardi ng ion flux. The ion-assisted deposition of diamond at a pressure of 10 mTo rr was performed at a bombarding ion energy as low as the drifting energy ( similar to several eV). The results indicate the need for optimizing the io n-to-adatom flux ratio for efficient migration and clustering of precursor adatoms yielding a high nucleation density over 10(9) cm(-2). (C) 2001 Amer ican Institute of Physics.