Behavior of hydrogen atoms in ultrahigh-frequency silane plasma
Citation
S. Takashima et al., Behavior of hydrogen atoms in ultrahigh-frequency silane plasma, J APPL PHYS, 89(9), 2001, pp. 4727-4731
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
SICI code
0021-8979(20010501)89:9<4727:BOHAIU>2.0.ZU;2-C
Abstract
We have investigated the behavior of the absolute density of hydrogen (H) a
toms in ultrahigh-frequency (UHF), (500 MHz) silane (SiH4) plasma by using
a vacuum ultraviolet absorption spectroscopy technique with a microdischarg
e hollow cathode lamp. In the UHF plasma using SiH4 highly diluted with hyd
rogen molecule (H-2) at a pressure of 20 Pa, an UHF power of 1000 W, and a
total flow rate of 200 sccm, the absolute density of H atoms slightly incre
ased from 7.4x10(11) to 7.9x10(11) cm(-3) with increasing the SiH4 flow rat
e ratios from 0% to 2.5% and then the H atom density decreased at the ratio
of 5%. The decrease of the density is due to the increase of the reaction
between the H atom and the SiH4 molecule. The behavior of the absolute dens
ity of H atoms was compared with that of the Balmer alpha (H-alpha) emissio
n intensity. It was found that the behaviors of the absolute H atom density
and the H-alpha emission intensity were quite different. Moreover, the kin
etics of H atom density in SiH4 plasmas have been clarified on the basis of
measured results. (C) 2001 American Institute of Physics.