Behavior of hydrogen atoms in ultrahigh-frequency silane plasma

Citation
S. Takashima et al., Behavior of hydrogen atoms in ultrahigh-frequency silane plasma, J APPL PHYS, 89(9), 2001, pp. 4727-4731
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
9
Year of publication
2001
Pages
4727 - 4731
Database
ISI
SICI code
0021-8979(20010501)89:9<4727:BOHAIU>2.0.ZU;2-C
Abstract
We have investigated the behavior of the absolute density of hydrogen (H) a toms in ultrahigh-frequency (UHF), (500 MHz) silane (SiH4) plasma by using a vacuum ultraviolet absorption spectroscopy technique with a microdischarg e hollow cathode lamp. In the UHF plasma using SiH4 highly diluted with hyd rogen molecule (H-2) at a pressure of 20 Pa, an UHF power of 1000 W, and a total flow rate of 200 sccm, the absolute density of H atoms slightly incre ased from 7.4x10(11) to 7.9x10(11) cm(-3) with increasing the SiH4 flow rat e ratios from 0% to 2.5% and then the H atom density decreased at the ratio of 5%. The decrease of the density is due to the increase of the reaction between the H atom and the SiH4 molecule. The behavior of the absolute dens ity of H atoms was compared with that of the Balmer alpha (H-alpha) emissio n intensity. It was found that the behaviors of the absolute H atom density and the H-alpha emission intensity were quite different. Moreover, the kin etics of H atom density in SiH4 plasmas have been clarified on the basis of measured results. (C) 2001 American Institute of Physics.