M. Meduna et al., X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy, J APPL PHYS, 89(9), 2001, pp. 4836-4842
We have studied the interface morphology of SiGe/Si multilayers by means of
specular and nonspecular x-ray reflectivity under grazing incidence. The s
amples were grown by molecular beam epitaxy on silicon substrates with (001
) surface orientation and with different directions of the surface misorien
tation. X-ray reflectivity measurements in different azimuths are compared
to data from atomic force microscopy, which are used to simulate the x-ray
experiments. With this combination of experimental techniques we have deter
mined the structural properties, in particular the ordering of different fe
atures present at the sample surface and inside the multilayer at the SiGe/
Si layer interfaces. (C) 2001 American Institute of Physics.