Modifying the microstructure and morphology of film surface layers by manipulating chemical vapor deposition reactor conditions

Citation
F. Paritosh et Dj. Srolovitz, Modifying the microstructure and morphology of film surface layers by manipulating chemical vapor deposition reactor conditions, J APPL PHYS, 89(9), 2001, pp. 4857-4865
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
9
Year of publication
2001
Pages
4857 - 4865
Database
ISI
SICI code
0021-8979(20010501)89:9<4857:MTMAMO>2.0.ZU;2-M
Abstract
Two spatial dimension front tracking simulations have been performed to stu dy the growth of polycrystalline, faceted films from randomly oriented nucl ei. We present strategies to optimize the microstructure, morphology, and t exture of thin films during chemical vapor deposition. In particular, we ex amine how changes in reactor conditions can be used to modify the mean grai n size, surface roughness, crystallographic texture, and growth zones. Chan ging growth conditions once the target bulk film structure is established c an be used to establish a thin surface region with much different structura l characteristics. Analytical models are provided to aid in choosing the ap propriate changes in reactor conditions and surface layer thickness to achi eve optimal properties. (C) 2001 American Institute of Physics.