Hole drift mobility in mu c-Si : H

In microcrystalline hydrogenated silicon (muc-Si:H), the drift mobility dep endencies of holes on electric field and temperature have been measured by using a method of equilibrium charge extraction by linearly increasing volt age. At room temperature the estimated value of the drift mobility of holes is much lower than in crystalline silicon and slightly higher than in amor phous hydrogenated silicon (a-Si:H). In the case of stochastic transport of charge carriers with energetically distributed localized states, the numer ical model of this method gives insight into the mobility dependence on ele ctric field. From the numerical modeling and experimental measurement resul ts, it follows that the hole drift mobility dependence on electric field is predetermined by electric field stimulated release from localized states. (C) 2001 American Institute of Physics.