DIELECTRIC-PROPERTIES OF SILICON-NITRIDE FILMS DEPOSITED BY MICROWAVEELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITION AT LOW-TEMPERATURE

The dielectric properties of amorphous silicon nitride (SiNx) films th at were prepared by microwave electron cyclotron resonance plasma chem ical vapor deposition at low temperature: in the frequency range 5 Hz- 1 MHz have been investigated. The dielectric dispersion in the frequen cy range exhibits two fractional power laws of (epsilon'-epsilon'(infi nity))proportional to omega(-p1) and (epsilon'-epsilon')proportional t o omega(n1-1) with p(1)=0.12-0.18 and n(1)=0.95-0.96. These are close to the result predicted by the many-cluster anomalous conduction theor y of fractal structure. (C) 1997 American Institute of Physics.