LA0.5SR0.5COO3 PB(NB0.04ZR0.28TI0.68)O-3/LA0.5SR0.5COO3 THIN-FILM HETEROSTRUCTURES ON SI USING TIN/PT CONDUCTING BARRIER/

Authors
YANG B AGGARWAL S DHOTE AM SONG TK RAMESH R LEE JS
Citation
B. Yang et al., LA0.5SR0.5COO3 PB(NB0.04ZR0.28TI0.68)O-3/LA0.5SR0.5COO3 THIN-FILM HETEROSTRUCTURES ON SI USING TIN/PT CONDUCTING BARRIER/, Applied physics letters, 71(3), 1997, pp. 356-358
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
3
Year of publication
1997
Pages
356 - 358
Database
ISI
SICI code
0003-6951(1997)71:3<356:LPTH>2.0.ZU;2-Q
Abstract
high density ferroelectric memory process flow requires the integratio n of conducting barrier layers to connect the drain of the pass-gate t ransistor to the bottom electrode of the ferroelectric stack. We are s tudying the effect of crystallinity of the TiN/Pt barrier layer with S i wafers on the ferroelectric properties of Sr0.5CoO3/Pb(Nb0.04Zr0.28T i0.68)O-3/La0.5Sr0.5CoO3 (LSCO/PNZT/LSCO) capacitors. Structural studi es indicate complete phase purity (i.e., fully perovskite) in both epi taxial and polycrystalline materials. The polycrystalline capacitors s how lower remnant polarization and coercive voltages. However, the ret ention, fatigue, and imprint characteristics are similar, indicating m inimal influence of crystalline quality on the ferroelectric propertie s. (C) 1997 American Institute of Physics.