Optical properties of InGaAs quantum dots formed on InAlAs wetting layer

We have fabricated a new self-assembled quantum dot system where InGaAs dot s are formed on InAlAs wetting layer and embedded in GaAs matrix. The low-t emperature photoluminescence and atomic force microscopy measurements confi rm the realization of the structure. In contrast to traditional InAs/Ga(Al) As quantum dots, the temperature dependence of the photoluminescence of the dots in such a structure exhibits an electronically decoupled feature due to a higher energy level of the wetting layer which keeps the dots more iso lated from each other. (C) 2001 Published by Elsevier Science B.V.